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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain
ZTX1151A
C B
E
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -45 -40 -5 -5 -3 -500 1 -55 to +200 UNIT V V V A A mA W °C
ZTX1151A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
ZTX1151A Datasheet
