ZTX300 Datasheet | Zetex Semiconductors

NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 – MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg 25 25 5 E-Line TO92 patible VALUE UNIT V V V m A m W °C 500 300 -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. 25 25 5 0.2 0.2 0.35 0.65 50 150 6 7 1.0 300 MHz p F d B TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=10µ A, IE=0 IC=5m A, IB=0 IE=10µ A, IC=0 VCB=25V, IE=0 VEB=4V, IC=0 IC=50m A, IB=5m A- IC=10m A, IB=1m A- IC=10m A, VCE=6V- IC=10m A, VCE=6V f=100MHz VCB=6V, IE=0 f=1MHz VCE=6V, f=1KHz RS=1500Ω , IC=100µ A Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance Noise Figure f T Cobo N - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-156 TYPICAL CHARACTERISTICS 0.95 0.25 IC/IB=30 0.90 0.20 IC/IB=10 0.85 IC/IB=30 VBE(sat) - (Volts) VCE(sat) - (Volts) IC/IB=10 0.70 10 - Collector Current (m A) - Collector Current (m A) VBE(sat) v IC VCE(sat) v IC 1.0 IC=50m A IB=5m A 0.9 200 VCE=6V VBE(sat) - (Volts) % Change of h FE 0.8 IC=10m A IB=1m A IC=50m A IC=10m...