ZTX320 Datasheet | Zetex Semiconductors

FEATURES - 15 Volt VCEO - f T=600 MHz APPLICATIONS - VHF/UHF operation ZTX320 ZTX321 ZTX322 ZTX323 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg 30 15 3 100 500 300 E-Line TO92 patible VALUE UNIT V V V m A m A m W °C -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter ZTX320, ZTX322 Saturation Voltage ZTX323 ZTX321 Base-Emitter ZTX320, ZTX322 Saturation Voltage ZTX323 ZTX321 Static Forward Current Transfer Ratio Output Capacitance Input Capacitance Transition Frequency at f=100MHz Noise Figure Power Gain ZTX320, ZTX321 ZTX322 ZTX323 SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) h FE Cobo Cibo f T N gpe 3-159 600 400 6 typical 15 20 20 100 MIN. 30 15 3 0.01 0.2 0.4 0.4 0.4 1.0 1.0 1.0 300 150 300 1.7 1.6 p F p F MHz MHz d B d B MAX. UNIT V V V µA µA CONDITIONS. IC=10µA, IE=0 IC=10m A, IB=0 IE=10µA, IC=0 VCB=15V, IE=0 VEB=2V, IC=0 IC=10m A, IB=1m A IC=10m A, IB=1m A IC=3m A, IB=0.3m A IC=10m A, IB=1m A IC=10m A, IB=1m A IC=3m A, IB=0.3m A IC=3m A, VCE=1V IC=3m A, VCE=1V IC=3m A, VCE=1V VCB=10V, f=1MHz VEB=0.5V, f=1MHz IC=4m A, VCE=10V IC=30m A, VCE=10V IE=1m A, VCE=6V RS=400Ω, f=60MHz IC=6m A, VCB=12V f=200MHz V V V V V V ZTX320 ZTX321 ZTX322 ZTX323 TYPICAL CHARACTERISTICS - Power Dissipation (Watts) 1000 0.4 0.3 f T - MHz VCE=10V f=100MHz 400 200 0 0 5 10 15 20 25 0 -60 -20 0 20 60 100 140 180 IC (m A) - Temperature (°C) f T v IC Derating...