ZTX458 Datasheet | Zetex Semiconductors

FEATURES - 400 Volt VCEO - 0.5 Amp continuous current - Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) h FE f T Cobo 100 100 15 50 5 MIN. SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. E-Line TO92 patible VALUE 400 400 5 300 1 -55 to +200 UNIT V V V 100 100 100 0.2 0.5 0.9 0.9 300 MHz p F n A n A n A V V V V CONDITIONS. IC=100µ A IC=10m A- IE=100µ A VCB=320V VCE=320V VEB=4V IC=20m A, IB=2m A IC=50m A, IB=6m A IC=50m A, IB=5m A IC=50m A, VCE=10V IC=1m A, VCE=10V IC=50m A, VCE=10V IC=100m A, VCE=10V- IC=10m A, VCE=20V f=20MHz VCB=20V, f=1MHz UNIT V V V m A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage 400 400 5 3-182 TYPICAL CHARACTERISTICS IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25°C -55°C +25°C +100°C +175°C IC/IB=10 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 10 20 - Collector Current (Amps) - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 h FE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE=10V 300 1.6 1.4 -55°C +25°C +100°C...