ZTX560 Datasheet | Zetex Semiconductors

FEATURES - Excellent h FE characterisristics up to IC=50m A - Low Saturation voltages PARTMARKING ZTX 560 PIN-OUT E-LINE VALUE -500 -500 -5 -500 -150 1 -55 to +150 UNIT V V V m A m A W °C ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range .. SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-base breakdown boltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter turn on voltage Static forward current transfer ratio SYMBOL V (BR)CBO V BR(CEO) V (BR)EBO I CBO ; I CES I EBO V CE(sat) V BE(sat) V BE(on) h FE 100 80 15 typ 60 8 110 typ. 1.5 typ. MIN. -500 -500 -5 -100 -100 -0.2 -0.5 -0.9 -0.9 300 300 MHz p F ns ␮s MAX. UNIT V V V n A n A V V V V CONDITIONS I C =-100 µ A I C =-10m A- I E =-100 µ A V CB =-500V; V CE =-500V V EB =-5V I C =-20m A, I C =-50m A, I B =-2m A- I B =-10m A- I C =-50m A, I B =-10m A- I =-50m A, V CE =-10V- C I C =-1m A, V CE =-10V I C =-50m A, V CE =-10V- I C =-100m A, V CE =-10V- V CE =-20V, I C =-10m A, f=50MHz V CB =-20V, f=1MHz V CE =-100V, I C =-50m A, I B1 =-5m A, I B2 =10m A Transition frequency Output capacitance Switching times f T C obo t on t off - Measured under pulsed conditions. Pulse width=300␮s. Duty cycle Յ2% ISSUE 2 - SEPTEMBER 2006 1 SEMICONDUCTORS TYPICAL CHARACTERISTICS ISSUE 2 - SEPTEMBER 2006 SEMICONDUCTORS PACKAGE OUTLINE PACKAGE DIMENSIONS Millimeters DIM Min A B C D E F G L 0.41 0.41 3.61 4.37 2.16 - Max 0.495 0.495 4.01 4.77 2.41 2.50 Min 0.016 0.016 0.142 0.172 0.085 - Max 0.0195 0.0195 0.158 0.188 0.095 0.098 Inches 1.27 NOM 13.00 13.97 0.050 NOM 0.512 0.550 © Zetex Semiconductors plc 2006 Europe Zetex Gmb H Kustermann-park Balanstraße 59...