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ZTX605 - NPN SILICON PLANAR MEDIUM POWER(DARLINGTON TRANSISTORS)

Key Features

  • 120 Volt VCEO.
  • 1 Amp continuous current.
  • Gain of 2K at IC=1 Amp.
  • Ptot= 1 Watt ZTX604 ZTX605 C B E.

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Part Number Description
ZTX600 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt ZTX604 ZTX605 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ZTX604 MIN. 120 100 10 0.01 10 IEBO ICES VCE(sat) VBE(sat) VBE(on) 0.1 10 1.0 1.5 1.8 1.7 3-212 MAX. SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX605 MIN. 140 120 10 MAX.