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ZTX652 - NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

Key Features

  • 100 Volt VCEO.
  • 2 Amp continuous current.
  • Low saturation voltage.
  • Ptot=1 Watt ZTX652 ZTX653 C B E.

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ZTX652 Not Recommended for New Design Please Use ZTX653 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ZTX652 ZTX653 C B E ABSOLUTE MAXIMUM RATINGS. E-Line TO92 Compatible PARAMETER SYMBOL ZTX652 ZTX653 UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C VCBO VCEO VEBO ICM IC Ptot 100 120 80 100 5 6 2 1 5.7 V V V A A W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER ZTX652 ZTX653 SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.