Datasheet4U Logo Datasheet4U.com

ZTX696B - NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Features

  • 180 Volt VCEO.
  • Gain of 500 at IC=100mA.
  • Very low saturation voltage.

📥 Download Datasheet

Datasheet preview – ZTX696B

Datasheet Details

Part number ZTX696B
Manufacturer Zetex Semiconductors
File Size 55.00 KB
Description NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Datasheet download datasheet ZTX696B Datasheet
Additional preview pages of the ZTX696B datasheet.
Other Datasheets by Zetex Semiconductors

Full PDF Text Transcription

Click to expand full text
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * 180 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Battery powered circuits * Motor drivers * Relay / solenoid drivers ZTX696B C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation * Power Dissipation at Tamb=25°C derate above 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 180 180 5 1 0.5 1.5 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
Published: |