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ZTX718 - PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Key Features

  • 6A Peak pulse current.
  • Excellent hFE characteristics up to 6A (pulsed).
  • low saturation voltage.
  • IC Cont 2.5A.

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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4– MAY 1998 FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A (pulsed) * low saturation voltage * IC Cont 2.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX618 ZTX718 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Practical Power Dissipation* Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P totp P tot T j:T stg VALUE -20 -20 -5 -6 -2.5 -500 1.5 1 -55 to +200 UNIT V V V A A mA W W °C * Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.