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PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt
ZTX756 ZTX757
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX756 -200 -200 -5 -1 -0.5 1
E-Line TO92 Compatible ZTX757 -300 -300 UNIT V V V A A W °C
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 50 40 30 20 3-265 ZTX756 ZTX757 UNIT V V V -100 -100 -0.5 -1.0 -1.
ZTX756 Datasheet
