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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94 FEATURES * 15 Volt VCEO * Gain of 200 at IC=2 Amps * Very low saturation voltage
ZTX788A
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -20 -15 -5 -10 -3 1.5 1 5.7
E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C
Operating and Storage Temperature Range
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
ZTX788A Datasheet
