ZTX795A - PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Zetex (now Diodes Incorporated)

Key Features

140 Volt VCEO.
Gain of 250 at IC=0.2 Amps.
Very low saturation voltage ZTX795A C B E.

ZTX795A pnp silicon planar medium power high gain transistor by Zetex (now Diodes Incorporated) - Datasheet Preview

Datasheet Details

Part number	ZTX795A
Manufacturer	Zetex (now Diodes Incorporated)
File Size	61.00 KB
Description	PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Datasheet	ZTX795A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 APRIL 94 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps * Very low saturation voltage ZTX795A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -140 -140 -5 -1 -0.5 1.5 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C Operating and Storage Temperature Range -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.