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ZUMT491 - NPN Silicon Transistor

Key Features

  • Extremely low saturation voltage.
  • 500mW power dissipation.
  • 1 Amp continuous collector current (IC).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT323 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 2 – MARCH 2007 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current (IC) APPLICATIONS * Ideally suited for space / weight critical applications ZUMT491 C E B SOT323 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb =25°C www.DataSheet4U.com SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j :T stg VALUE 80 60 5 2 1 200 500 -55 to +150 UNIT V V V A A mA mW °C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).