ZUMT617 Datasheet | Zetex Semiconductors

FEATURES - - - - - 500m W POWER DISSIPATION IC CONT 1.5A 5A Peak Pulse Current Excellent HFE Characteristics Up To 5A (pulsed) Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS - DC-DC converter boost functions - Motor drive functions DEVICE TYPE ZUMT617 PLEMENT ZUMT717 PARTMARKING T61 RCE(sat) 135mΩ at 1.5A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current- - Continuous Collector Current Base Current Power Dissipation at Tamb =25°C- SYMBOL VCBO VCEO VEBO ICM IC IB Ptot VALUE 15 15 5 5 1.5 200 385 † 500 ‡ -55 to +150 UNIT V V V A A m A m W Operating and Storage Temperature Tj:Tstg Range °C † Remended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using parable measurement methods adopted by other suppliers. ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 16.5 40 75 150 205 930 865 200 300 250 200 75 30 420 450 390 300 150 75 180 15 50 250 MHz p F ns ns MIN. 15 15 5 10 10 10 20 55 100 200 245 1100 1100 TYP. MAX. UNIT V V V n A n A n A m V m V m V m V m V m V m V CONDITIONS. IC= 100µA IC= 10m A- IE= 100µA VCB= 10V VEB= 4V VCES= 10V IC= 100m A, IB=10m A- IC= 250m A, IB= 10m A- IC= 500m A, IB=10m A- IC= 1A, IB=10m A- IC= 1.5A, IB=20m A- IC= 1.5A, IB=20m A- IC= 1.5A, VCE= 2V- IC= 10m A, VCE= 2V- IC= 100m A, VCE= 2V- IC= 500m A, VCE=2V- IC= 1A, VCE=2 V- IC= 3A, VCE=2V- IC=5A, VCE= 2V- IC= 50m A, VCE= 10V f= 100MHz VCB= 10V, f=1MHz VCC= 10V, IC= 1A IB1=IB2=100m A Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer...