Datasheet4U Logo Datasheet4U.com

ZVN0124A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • 240 Volt VDS.
  • RDS(on)=16Ω.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ZVN0120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ETC
ZVN0117TA N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ETC
ZVN0545G SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET DIODES
ZVN2106A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Diodes
ZVN2106B N-CHANNEL ENHANCEMENT MODE MOSFET Seme LAB

Other Datasheets by Zetex (now Diodes Incorporated)

Part Number Description
ZVN0535A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0540A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0545A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN0545G N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN1409A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 – MARCH 94 FEATURES * 240 Volt VDS * RDS(on)=16Ω APPLICATIONS * Telephone handsets ZVN0124A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 240 160 2 ± 20 700 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 240 1 3 20 10 100 500 16 100 85 20 7 7 8 16 8 MAX.