ZVN0535A Datasheet | Zetex Semiconductors

FEATURES - 350 Volt VDS - RDS(on)=50Ω ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 patible VALUE 350 90 600 ± 20 UNIT V m A m A V m W °C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) 100 70 10 4 7 7 16 10 3-353 150 50 350 1 3 20 10 400 MAX. UNIT CONDITIONS. V V n A µA µA ID=1m A, VGS=0V ID=1m A, VDS= VGS VGS=± 20V, VDS=0V VDS=350 V, VGS=0 VDS=280 V, VGS=0V, T=125°C(2) VDS=25 V, VGS=10V VGS=10V,ID=100m A VDS=25V,ID=100m A m A Ω Forward Transconductance(1)(2gfs ) Input Capacitance (2) mon Source Output Capacitance (2) Ciss Coss m S p F p F p F ns ns ns ns VDS=25 V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) td(on) tr td(off) tf VDD ≈ 25V, ID=100m A ( 1 TYPICAL CHARACTERISTICS ID(On) On-State Drain Current (m A) 800 700 600 500 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 3V 4V VGS= 10V 8V 6V 5V 400 VGS= 10V 6V 5V 4V ID(On)Drain Current (m A) 100 3V 0 0 4 8 12 16 20 - Drain Source Voltage (Volts) - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics VDS-Drain Source Voltage (Volts) ID(On) Drain Current (m A) 16 ID= 250m A VDS=...