ZVN1409A Datasheet | Zetex Semiconductors

FEATURES - 90 Volt VDS - Low input capacitance - Fast switching E-Line TO92 patible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 90 10 40 ± 20 625 -55 to +150 UNIT V m A m A V m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate Body Leakage Zero Gate Voltage Drain Current On State Drain Current (1) Static Drain Source On State Resistance (1) SYMBOL BV DSS V GS(th) I GSS I DSS MIN. 90 0.8 2.4 100 MAX. UNIT V V n A CONDITIONS. I D=0.1m A, V GS=0V ID=0.1m A, V DS= V GS V GS= ± 20V, V DS=0V V DS=90V, V GS=0V V DS=72V, V GS=0V, T=125°C V DS=25 V, V GS=10V V GS=10V,I D=5m A V DS=25V,I D=10m A 1 µA 100 (2) µ A 10 250 2 6.5 3 0.65 0.3 0.5 0.35 0.5 m A Ω m S p F p F p F ns ns ns ns I D(on) R DS(on) Forward Transconductance (1)( g fs 2) Input Capacitance (2) mon Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3)(4) Rise Time (2)(3)(4) Turn-Off Delay Time (2)(3)(4) Fall Time (2)(3)(4) C iss C oss C rss t d(on) tr t d(off) tf V DS=25 V, V GS=0V f=1MHz V DD ≈ 25V, I D=5m A 3-358 ( 1 TYPICAL CHARACTERISTICS 70 60 VGS= 10V 8V 40 30 20 10 6V 5V 4V 3V 0 0 10 20 30 40 50 0 2 4 6 8 10 50 VGS= 10V 8V ID-Drain Current (m A) ID-Drain Current (m A) 40 30 6V 5V 4V 3V - Drain Source Voltage (Volts) - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics VDS-Drain Source Voltage (Volts) ID-Drain Current (m A) VDS= 10V 30 20 10 ID= 24m A 18m A 12m...