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ZVN1409A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • 90 Volt VDS.
  • Low input capacitance.
  • Fast switching ZVN1409A D G S E-Line TO92 Compatible.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 90 Volt VDS * Low input capacitance * Fast switching ZVN1409A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 90 10 40 ± 20 625 -55 to +150 UNIT V mA mA V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate Body Leakage Zero Gate Voltage Drain Current On State Drain Current (1) Static Drain Source On State Resistance (1) SYMBOL BV DSS V GS(th) I GSS I DSS MIN. 90 0.8 2.4 100 MAX.