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ZVN2110G - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • 6A PULSE DRAIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 7 FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED ZVN2110G D S PARTMARKING DETAIL COMPLEMENTARY TYPE ZVN2110 ZVP2110G D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 100 500 6 ± 20 2 -55 to +150 UNIT V mA A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).