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ZVN3320F - N-Channel MOSFET

Key Features

  • 200 Volt VDS.
  • RDS(on)= 25Ω 7 ZVN3320F S D G.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – DECEMBER 1995 FEATURES * 200 Volt VDS * RDS(on)= 25Ω 7 ZVN3320F S D G PARTMARKING DETAIL – MU ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 200 60 1 ± 20 330 -55 to +150 SOT23 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).