Datasheet4U Logo Datasheet4U.com

ZVN4206A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • 60 Volt VDS.
  • RDS(on) = 1 Ω ZVN4206A D G S.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ZVN4206G N-Channel MOSFET Diodes
ZVN4106F 60V N-Channel MOSFET Diodes
ZVN4306A 60V N-Channel MOSFET Diodes
ZVN4306G 60V N-Channel MOSFET Diodes
ZVN4306GV N-Channel MOSFET Diodes

Other Datasheets by Zetex (now Diodes Incorporated)

Part Number Description
ZVN4206AV N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN4206G N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN4206GV N-Channel MOSFET
ZVN4210A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ZVN4210G N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – JUNE 94 FEATURES * 60 Volt VDS * RDS(on) = 1 Ω ZVN4206A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg 60 E-LINE TO92 COMPATIBLE VALUE UNIT V mA A V W °C 600 8 ± 20 0.7 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN.