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ZVN4210G - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • Low RDS(on) = 1.5Ω.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS(on) = 1.5Ω PARTMARKING DETAIL - ZVN4210 ZVN4210G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 100 0.8 6 ± 20 2 -55 to +150 UNIT V A A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 100 0.8 2.4 100 10 100 2.5 1.5 1.8 250 100 40 12 4 8 20 30 MAX. UNIT CONDITIONS. V V nA µA µA A Ω Ω mS pF pF pF ns ns ns ns V DD≈ 25V, I D=1.