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ZVN4306G - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • Very low RDS(ON) = .33Ω.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * Very low RDS(ON) = .33Ω APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive PARTMARKING DETAIL ZVN4306 ZVN4306G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg TYP. MAX. VALUE 60 2.1 15 ± 20 3 -55 to +150 UNIT V A A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. 60 BVDSS VGS(th) IGSS IDSS 12 0.22 0.32 0.