Datasheet4U Logo Datasheet4U.com

ZVN4424C - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features

  • Compact E-LINE (TO92 style) package.
  • 240 Volt BVDS.
  • RDS(on)=4.3Ω Typical at VGS=2.5V.
  • Low threshold.
  • Fast switching.

📥 Download Datasheet

Datasheet preview – ZVN4424C

Datasheet Details

Part number ZVN4424C
Manufacturer Zetex Semiconductors
File Size 765.00 KB
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Datasheet download datasheet ZVN4424C Datasheet
Additional preview pages of the ZVN4424C datasheet.

📁 Similar Datasheet

  • ZVN4424A - N-Channel MOSFET (Diodes)
  • ZVN4424G - N-Channel MOSFET (Diodes)
  • ZVN4106F - 60V N-Channel MOSFET (Diodes)
  • ZVN4206G - N-Channel MOSFET (Diodes)
  • ZVN4306A - 60V N-Channel MOSFET (Diodes)
  • ZVN4306G - 60V N-Channel MOSFET (Diodes)
  • ZVN4306GV - N-Channel MOSFET (Diodes)
  • ZVN4310G - 100V N-CHANNEL MOSFET (Diodes)
  • ZVN4525E6 - 250V N-CHANNEL ENHANCEMENT MODE MOSFET (Diodes)
  • ZVN4525G - 250V N-Channel MOSFET (Diodes)
Other Datasheets by Zetex Semiconductors
  • ZVN4424Z - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
  • ZVN4206A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
  • ZVN4206AV - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
  • ZVN4206G - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
  • ZVN4206GV - N-Channel MOSFET
  • ZVN4210A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
  • ZVN4210G - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
  • ZVN4306A - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Full PDF Text Transcription

Click to expand full text
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – August 1994 FEATURES * Compact E-LINE (TO92 style) package * 240 Volt BVDS * RDS(on)=4.3Ω Typical at VGS=2.5V * Low threshold * Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipment * Telecoms and high voltage dc-dc converters ZVN4424A/C D G G S D S SUFFIX A SUFFIX C E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 240 260 1.
Published: |