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ZVN4525E6 - 250V N-CHANNEL ENHANCEMENT MODE MOSFET

General Description

This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown.

Key Features

  • High voltage Low on-resistance Fast switching speed Low gate drive Low threshold Complementary P-channel Type ZVP4525E6 SOT23-6 package SOT23-6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. SOT89 and SOT223 versions are also available.