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ZVP0545G - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • 450 Volt VDS.
  • RDS(on)=150Ω ZVP0545G D S D G.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 – MARCH 98 FEATURES * 450 Volt VDS * RDS(on)=150Ω ZVP0545G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE -450 -75 -400 ± 20 2 -55 to +150 UNIT V mA mA V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).