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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=5Ω
ZVP2106A
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE -60 -280 -4 ± 20 700 -55 to +150 UNIT V mA A V mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) -1 5 150 100 60 20 7 15 12 15 -60 -1.5 -3.5 20 -0.5 -100 MAX. UNIT CONDITIONS.
ZVP2106A Datasheet
