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ZVP2110G - P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Key Features

  • 100 Volt VDS.
  • RDS(on)=8Ω 7 ZVP2110G D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω 7 ZVP2110G D COMPLEMENTARY TYPE – ZVN2110G PARTMARKING DETAIL – ZVP2110 G D S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -100 -310 -3 ± 20 UNIT V mA A V W °C 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -750 8 125 100 35 10 7 15 12 15 -100 -1.5 -3.