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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94 FEATURES * 50 Volt VDS * RDS(on)=10Ω * Low threshold
ZVP4105A
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg -50
E-Line TO92 Compatible VALUE -175 -520
± 20
UNIT V mA mA V mW °C
625 -55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. BVDSS VGS(th) IGSS IDSS -50 -0.8 -2.0 10 -15 -60 -100 10 50 40 15 6 10 10 18 25 MAX. UNIT CONDITIONS. V V nA
µA µA Ω
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current
ID=-0.
ZVP4105A Datasheet
