ZX5T849G Datasheet | Zetex Semiconductors

DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES - Extemely low equivalent on-resistance; RSAT = 28m at 6.5A - 7 amps continuous current - Up to 20 amps peak current - Very low saturation voltages - Excellent h FE characteristics up to 20 amps SOT223 APPLICATIONS - DC - DC converters - MOSFET gate drivers - Charging circuits - Power switches - Motor control ORDERING INFORMATION DEVICE ZX5T849GTA ZX5T849GTC REEL SIZE 7” 13" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1000 units 4000 units PINOUT DEVICE MARKING - X5T849 TOP VIEW ISSUE 1 - NOVEMBER 2003 1 SEMICONDUCTORS ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT 80 30 7 7 20 3.0 24 1.6 12.8 -55 to +150 UNIT V V V A A W m W/°C W m W/°C °C THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R ⍜ JA R ⍜ JA VALUE 42 78 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - NOVEMBER 2003 SEMICONDUCTORS CHARACTERISTICS ISSUE 1 - NOVEMBER 2003 3 SEMICONDUCTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current...