ZXMN2B03E6 Datasheet | Zetex Semiconductors

ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) (⍀) 0.040 @ VGS= 4.5V 20 0.055 @ VGS= 2.5V 0.075 @ VGS= 1.8V ID (A) 5.4 4.6 4.0 Description This new generation trench MOSFET from Zetex Features low onresistance achievable with low gate drive. Features - - .. Low on-resistance Fast switching speed Low gate drive capability SOT23-6 package - - Applications - - - - DC-DC converters Power management functions Disconnect switches Motor control D D G Top view 3,000 Ordering information Device ZXMN2B03E6TA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel Device marking 2B3 Issue 1 -...