• Part: ZXMN3B14F
  • Description: N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
  • Category: MOSFET
  • Manufacturer: Zetex Semiconductors
  • Size: 230.63 KB
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Zetex Semiconductors
ZXMN3B14F
ZXMN3B14F is N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE manufactured by Zetex Semiconductors.
DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that bines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES - Low on-resistance - Fast switching speed - Low threshold - Low gate drive - SOT23 package PACKAGE APPLICATIONS - DC-DC converters - Power management functions - Disconnect switches - Motor control ORDERING INFORMATION DEVICE ZXMN3B14FTA ZXMN3B14FTC REEL SIZE 7” 13” TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3,000 units 10,000 units PINOUT DEVICE MARKING - 3B14 ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ V GS = 4.5V; T A =25°C (b) @ V GS = 4.5V; T A =70°C (b) @ V GS = 4.5V; T A =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C Linear Derating Factor Operating and Storage Temperature Range T j , T stg (b) SYMBOL V DSS V GS ID LIMIT 30 Ϯ12 3.5 2.9 2.9 16 2.4 16 1 8 1.5 12 -55 to +150 UNIT V V A A A A A A W m W/°C W m W/°C °C I DM IS I SM PD PD THERMAL RESISTANCE PARAMETER Junction to Ambient (a) SYMBOL R ⍜ JA R ⍜ JA VALUE 125 83 UNIT °C/W °C/W Junction to Ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t Յ 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 ␮s - pulse width limited by maximum junction temperature. ISSUE...