Datasheet4U Logo Datasheet4U.com

ZXMS6001N3 - 60V N-Channel MOSFET

Datasheet Summary

Description

Low input current self protected low side MOSFET intended for Vin=5V applications.

Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality.

Intended as a general purpose switch.

Features

  • Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input protection (ESD) Load dump protection (actively protects load) Low input current SOT223 Ordering information Device ZXMS6001N3TA Package SOT223 Part mark ZXMS6001 Reel size (inches) 7 Tape width (mm) 12 embossed Quantity per reel 1,000 Issue 1 - January 2008 © Zetex Semiconductor.

📥 Download Datasheet

Datasheet preview – ZXMS6001N3

Datasheet Details

Part number ZXMS6001N3
Manufacturer Zetex Semiconductors
File Size 234.54 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet ZXMS6001N3 Datasheet
Additional preview pages of the ZXMS6001N3 datasheet.

📁 Similar Datasheet

  • ZXMS6002GQ - N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET (Diodes)
  • ZXMS6003G - 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET (Diodes)
  • ZXMS6003GQ - N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET (Diodes)
  • ZXMS6004DG - 60V N-CHANNEL MOSFET (DIODES)
  • ZXMS6004DGQ - 60V N-CHANNEL MOSFET (Diodes)
  • ZXMS6004DGQ-13 - 60V N-CHANNEL MOSFET (DIODES)
  • ZXMS6004DN8 - N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET (Diodes)
  • ZXMS6004DT8 - 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET (Diodes Incorporated)
  • ZXMS6004DT8Q - N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET (Diodes)
  • ZXMS6004FF - 60V N-Channel MOSFET (Diodes Incorporated)
Other Datasheets by Zetex Semiconductors

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On-state resistance Max nominal load current (a) Min nominal load current (c) Clamping Energy 675mΩ 1.1A (VIN = 5V) 0.7A (VIN = 5V) 550mJ Description Low input current self protected low side MOSFET intended for Vin=5V applications. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch. Note: The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is S recommended for best thermal performance.
Published: |