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ZXT10N20DE6 - 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

General Description

This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.

This makes it ideal for high efficiency, low voltage switching applications.

Key Features

  • Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 12A IC=3.5A Continuous Collector Current SOT23-6 package SOT23-6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXT10N20DE6 SuperSOT™ 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • • • • • • • • • Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 12A IC=3.