Datasheet4U Logo Datasheet4U.com

ZXT13P20DE6 - 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

General Description

This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.

This makes it ideal for high efficiency, low voltage switching applications.

Key Features

  • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 10A IC=3.5A Continuous Collector Current SOT23-6 package SOT23-6.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ZXT13N50DE6 50V NPN LOW SATURATION SWITCHING TRANSISTOR Diodes
ZXT10P20DE6 20V PNP LOW SATURATION SWITCHING TRANSISTOR DIODES
ZXT10P20DE6Q 20V PNP LOW SATURATION SWITCHING TRANSISTOR DIODES
ZXT2MA 20V PNP LOW SATURATION SWITCHING TRANSISTOR Diodes
ZXT690BK 45V NPN HIGH GAIN MEDIUM POWER TRANSISTOR DIODES

Other Datasheets by Zetex (now Diodes Incorporated)

Part Number Description
ZXT13P12DE6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
ZXT13P40DE6 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
ZXT13N15DE6 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
ZXT13N20DE6 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
ZXT13N50DE6 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ZXT13P20DE6 SuperSOT4™ 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • • • • • • • • • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 10A IC=3.