ZXTN19055DZ
ZXTN19055DZ is NPN medium power transistor manufactured by Zetex Semiconductors.
Description
Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
Feature
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- - Extremely low equivalent on-resistance of 28m⍀ 6 Amps continuous current Up to 10 amps peak current Very low saturation voltages Excellent h FE characteristics up to 10 amps 150V Forward blocking voltage
E C C B Pinout
- top view
Applications
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- Emergency lighting circuits Motor driving (including DC fans) Solenoid, relay and actuator drivers DC modules Backlight inverters
Ordering information
Device ZXTN19055DZTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000
Device marking
S75 Issue 1
- June 2006
© Zetex Semiconductors plc 2006
.zetex.
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage (forward blocking voltage) Collector-emitter voltage (base open) Emitter-base voltage Continuous collector current(b) Peak pulse current Power dissipation at Tamb =25°C(a) Linear derating factor Power dissipation at Tamb =25°C Linear derating factor Operating and storage temperature range Tj, Tstg
(b)
Symbol VCBO VCEX VCEO VEBO IC ICM PD
Limit 150 150 55 7 6 10 1.5 12
Unit V V V V A A W m W/°C W m W/°C °C
2.1 16.8 -55 to +150
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Symbol R⍜JA R⍜JA Limit 83 59 Unit °C/W °C/W
NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Issue 1
- June 2006
© Zetex Semiconductors plc 2006
.zetex.
Characteristics...