ZXTN25020DFL Datasheet | Zetex Semiconductors

Description Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. .. Features - - - High peak current Low saturation voltage 100V forward blocking voltage Applications - - - - MOSFET and IGBT gate driving DC-DC conversion LED driving Interface between low voltage IC's and loads E C B Pinout - top view Tape width (mm) 8 Quantity per reel 3,000 Ordering information Device ZXTN25020DFLTA Reel size (inches) 7 Device marking 1A1 Issue 4 - January 2007 © Zetex Semiconductors plc 2007 .zetex. Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(a) Base current Peak pulse current Power dissipation at Tamb =25°C(a) Linear derating factor Operating and storage temperature range Tj, Tstg Symbol VCBO VCEX VCEO VECO VEBO IC IB ICM PD Limit 100 100 20 5 7 2 500 8 350 2.8 -55 to 150 Unit V V V V V A m A A m W m W/°C °C Thermal resistance Parameter Junction to ambient(a) Symbol R⍜JA Limit 357 Unit °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 4 - January 2007 © Zetex Semiconductors plc 2007 .zetex. Characteristics Issue 4 - January 2007 © Zetex Semiconductors plc...