ZXTP2039F Datasheet | Zetex Semiconductors

Description This transistor bines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. .. Features - Low saturation voltage for reduced power dissipation - 1 to 2 amp high current capability - Pb-free - SOT23 package Applications - Power MOSFET gate driving - Low loss power switching Ordering information Pin out - top view Device ZXTP2039FTA ZXTP2039FTC Reel size 7” 13” Tape width 8mm 8mm Quantity per reel 3,000 10,000 Device marking P39 Issue 3 - August 2005 © Zetex Semiconductors plc 2005 .zetex. Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current- Peak base current Power dissipation @ TA=25°C- Operating and storage temperature Symbol VCBO VCEV VCEO VEBO ICM IC IBM PD Tj:Tstg Limit -80 -80 -60 -5.0 -2 -1 -1 350 -55 to +150 Unit V V V V A A A m W °C NOTES: - For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 3 - August 2005 © Zetex Semiconductors plc 2005 .zetex. Electrical characteristics (@TAMB = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Static forward current transfer ratio Symbol V(BR)CBO V(BR)CEV V(BR)CEO V(BR)EBO ICES ICBO IEBO h FE 100 100 80 15 Collector-emitter saturation voltage VCE(sat) -0.2 -0.3 -0.6 Base-emitter saturation voltage Base-emitter turn-on voltage Transition frequency Output capacitance VBE(sat) VBE(on) f T Cobo 150 10 p F -1.2 -1.0 V V V V V 300 Min. -80 -80 Max. Unit V V Conditions IC=-100␮A IC=-1␮A -0.3V < VBE < 1V IC=-10m A- IE=-100µA VCE=-60V VCB=-60V VEB=-4V IC=-1m A, VCE=-5V IC=-500m A, VCE=-5V- IC=-1A, VCE=-5V-...