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ZXTP25012EFH - PNP Transistor

General Description

Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor.

The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Key Features

  • High power dissipation SOT23 package High peak current Very high gain, 500 minimum Low saturation voltage E E C B Pinout - top view.

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Other Datasheets by Zetex (now Diodes Incorporated)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC(cont) = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. www.DataSheet4U.