• Part: BBY31
  • Description: SILICON PLANAR VARIABLE CAPACITANCE DIODE
  • Category: Diode
  • Manufacturer: Zetexs
  • Size: 35.34 KB
Download BBY31 Datasheet PDF
Zetexs
BBY31
BBY31 is SILICON PLANAR VARIABLE CAPACITANCE DIODE manufactured by Zetexs.
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTMARKING DETAIL BBY31 - S1 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE 330 -55 to +150 UNIT m W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Reverse current SYMBOL V BR MIN. 28.0 TYP. MAX. UNIT V CONDITIONS. I R = 10 µ A V R = 28V V R = 28V, T amb = 85°C 10 1.0 n A µA TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER Diode Capacitance SYMBOL Cd 1.8 Capacitance Ratio Series Resistance Cd / Cd rd 5.0 1.2 Ω MIN. TYP. 17.5 11.5 2.8 MAX. UNIT p F p F p F CONDITIONS. V R = 1V, f=1MHz V R = 3V, f=1MHz V R = 25V, f=1MHz V R = 3V/25V, f=1MHz f=470MHz at the value of V R at which C d=9p F Spice parameter data is available upon request for this...