APM9435 Datasheet | ZhenYang

Description The Z9435 is the P-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook puter power management and other battery powered circuits,and low in-line power loss that are needed in a very small outline surface mount package. Product Summary VDS ID (at VGS=20 V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) z Pin Configuration -30V -5.3A < 55m Ω < 90mΩ Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS ID Pulsed Drain Current1) Maximum Power Dissipation Operating Junction Temperature TA=25 TA=70 IDM PD TJ Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) 2) R JC R JA Limits -30 20 -5.3 -20 2.5 -55 to 150 30 Units Units ℃ /W /W http://.junyi-ic. TEL:0755-29955070 FAX:0755-27858707 1/5 Zhen Yang Group CO,LTD APM9435 z Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Parameter BVB DSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source On-Resistance VGS(th) IGSS IDSS g FS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Forward Transconductance Qg Qgs Qgd t D(on) tr t D(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Conditions STATIC VGS=0V,ID=-250 A VGS = -10V, ID = -5.3A VGS =-4.5V, ID = -4.2A VGS =VGS, ID=-250 A VGS =+20V, VDS = 0V VDS = -24V, VGS = 0V VDS = -15V, ID =-5.3A DYNAMIC Min -30 -1.0 4 VDS=-15V, ID=-5.3A,...