Zowie Technology RB521S-30GH
Schottky Barrier Diode
| Part No. | RB521S-30GH |
|---|---|
| Datasheet | RB521S-30GH Download |
| Manufacturer |  Zowie Technology |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TA = 25°C) Parameter DC reverse voltage Mean rectifying current Peak forward surge current* Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Limits 30 200 1 125 -40~+125 *60Hz for 1cycle.ELECTRICAL CHARACTERISTICS
(TA= 25°C) Parameter Symbol Min. Forward voltage Reverse current VF IR - Typ - Unit V mA A °C °C Max. 0.50 30 Unit V µΑ Conditions IF=200mA VR=10V REV. 0 Zowie Technology Corporation FORWARD CURRENT : IF (A) CAPACITANCE BETWEEN TERMINALS : CT(pF) Zowie Technology Corporation Electrical characteristic curves(Ta=25oC) REVERSE CURRENT : IR (mA) FORWARD VOLTAGE:VF(mV) Fig. 1 Forward characteristics 100 Ta=25oC f=1MHz 50 20 10 5 2 1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR(V) Fig. 3 Capacitance between terminals characteristics 20 Ifsm 1cyc 15 8.3ms 10 5 AVE:5.60A 0 1000 IFSM DISPERSION MAP Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=1mA IF=20mA 10 0.001 1ms time 300us 0.1 10 TIME:(s) Rth-t CHARACTERISTICS 1000 FORWARD POWER DISSIPATION:Pf(W) PEAK SURGE FORWARD CURRENT:IFSM(A) Io CURRENT (%) 10 1.0 0.1 0.01 0.001 0.0001 0.00001 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE:VR(V) Fig.