Description
These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology.
Features
- 60V / 84A R DS(on) =9mΩ(typ)，V GS =10V, I D =42A Fast switching 100% avalanche tested Improved dv/dt capability. . 3 Absolute Maximum Ratings T C = 25°C unless otherwise noted
APQ84SN06AH-XXM0
Symbol V DSS ID I DM V GS E AS I AR E AR dv/dt PD T J , T STG TL
Parameter Drain-Source Voltage Drain Current - Continuous (T C = 25°C) - Continuous (T C = 100°C) Drain Current.
- Pulsed ① Gate-Source Voltage Single Pulsed Avalanche Energy ② Avalan.
APQ84SN06AH Datasheet
