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APQ84SN06AH - 60V/84A N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology.

Features

  • 60V / 84A R DS(on) =9mΩ(typ)，V GS =10V, I D =42A Fast switching 100% avalanche tested Improved dv/dt capability. . 3 Absolute Maximum Ratings T C = 25°C unless otherwise noted APQ84SN06AH-XXM0 Symbol V DSS ID I DM V GS E AS I AR E AR dv/dt PD T J , T STG TL Parameter Drain-Source Voltage Drain Current - Continuous (T C = 25°C) - Continuous (T C = 100°C) Drain Current.
  • Pulsed ① Gate-Source Voltage Single Pulsed Avalanche Energy ② Avalan.

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Datasheet Details

Part number APQ84SN06AH
Manufacturer alpha pacific
File Size 732.87 KB
Description 60V/84A N-Channel MOSFET
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    DEVICE SPECIFICATION APQ84SN06AH 60V/84A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 2 Features • • • • • 60V / 84A R DS(on) =9mΩ(typ)，V GS =10V, I D =42A Fast switching 100% avalanche tested Improved dv/dt capability..
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