APQ84SN06AH Overview
These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor...
APQ84SN06AH Key Features
- 60V / 84A R DS(on) =9mΩ(typ)，V GS =10V, I D =42A Fast switching 100% avalanche tested Improved dv/dt capability