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AO4414 Datasheet PDF

Alpha & Omega Semiconductors AO4414

The AO4414 uses advanced trench technology to excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Part No. AO4414
Datasheet AO4414 Download
Manufacturer
Alpha & Omega Semiconductors
Description N-Channel FET
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AO4414 datasheet page 1 preview

GENERAL DESCRIPTION

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FEATURES

VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) Standard Product AO4414 is Pb-free (meets ROHS & Sony 259 specifications). AO4414L is a Green Product ordering option. AO4414 and AO4414L are electrically identical. D S S S G D D D D G SOIC-8 S

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 8.5 7.1 50 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4414

ELECTRICAL CHARACTERISTICS

(T J=25°C unless otherwise noted) Symbol Parameter...
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