Alpha & Omega Semiconductors AO4609
The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. The value in any a given application depends on the user's specific board design.| Part No. | AO4609 |
|---|---|
| Datasheet | AO4609 Download |
| Manufacturer |  Alpha & Omega Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
n-channel p-channel -30V VDS (V) = 30V ID = 8.5A -3A RDS(ON) RDS(ON) < 18mΩ (VGS=10V) < 130mΩ (VGS = 10V) < 28mΩ (VGS=4.5V) < 180mΩ (VGS = 4.5V) < 260mΩ (VGS = 2.5V) D2 S2 G2 S1 G1 D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channelABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±12 -3 -2.4 -6 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 8.5 6.6 40 2 1.28 -55 to 150 W °C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL RθJA...
