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AO6402 Datasheet PDF

Alpha & Omega Semiconductors AO6402

The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Part No. AO6402
Datasheet AO6402 Download
Manufacturer
Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
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AO6402 datasheet page 1 preview

GENERAL DESCRIPTION

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 5A < 31mΩ < 43mΩ TSOP6 Top View Bottom View Top View D D D D G S G Pin1

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 5 4 20 1.25 0.8 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 82 110 Maximum Junction-to-Lead Steady-State RθJL 56 Max 100 130 70 D S Units V V A W °C Units °C/W °C/W °C/W Rev 8: February 2011 Page 1 of 5 AO6402

ELECTRICAL CHARACTERISTICS

(TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current...
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