AOB403 Datasheet PDF | Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AOB403

The AOB403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2-PAK package, this device is well suited for high current load applications. Standard product AOB403 is Pb-free (meets ROHS & Sony 259 specifications).

Part No.	AOB403
Datasheet	AOB403 Download
Manufacturer	Alpha & Omega Semiconductors
Description	P-Channel MOSFET
Buy	Stock & Price

GENERAL DESCRIPTION

AOB403L is a Green Product ordering option. AOB403 and AOB403L are electrically identical.

FEATURES

VDS (V) = -60V ID = -30A (VGS=-10V) RDS(ON) < 44mΩ (VGS = -10V ) @ 30A RDS(ON) < 55mΩ (VGS = -4.5V ) @ 20A TO-263 D2-PAK D Top View Drain Connected to Tab G S GD S

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -60 ±20 -30 -20 -60 -26 134 83 42 2.2 1.45 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 10 45 1.35 Max 12 55 1.8 Units V V A A mJ W W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.