GENERAL DESCRIPTION
FEATURES
VDS (V) = -30V ID = -18A RDS(ON) < 32mΩ (VGS = 20V) RDS(ON) < 60mΩ (VGS = 10V) TO-252 D-PAK D Top View Drain Connected to Tab G S GD S ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C G Current B,G TA=100°C B ID Pulsed Drain Current IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -18 -18 -40 -18 16 60 30 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RθJA 16.7 40 25 50 Maximum Junction-to-Case C Steady-State RθJL 1.9 2.5 Alpha & Omega Semiconductor, Ltd. Units V V A A mJ W W °C Units °C/W °C/W °C/W AOD405 ELECTRICAL CHARACTERISTICS
(TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min S...