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AOD405 Datasheet PDF

Alpha & Omega Semiconductors AOD405

The AOD405 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.
Part No. AOD405
Datasheet AOD405 Download
Manufacturer
Alpha & Omega Semiconductors
Description P-Channel MOSFET
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AOD405 datasheet page 1 preview

GENERAL DESCRIPTION

FEATURES

VDS (V) = -30V ID = -18A RDS(ON) < 32mΩ (VGS = 20V) RDS(ON) < 60mΩ (VGS = 10V) TO-252 D-PAK D Top View Drain Connected to Tab G S GD S

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C G Current B,G TA=100°C B ID Pulsed Drain Current IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -18 -18 -40 -18 16 60 30 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RθJA 16.7 40 25 50 Maximum Junction-to-Case C Steady-State RθJL 1.9 2.5 Alpha & Omega Semiconductor, Ltd. Units V V A A mJ W W °C Units °C/W °C/W °C/W AOD405

ELECTRICAL CHARACTERISTICS

(TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min S...
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