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AOD4120 Datasheet PDF

Alpha & Omega Semiconductors AOD4120

The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications).
Part No. AOD4120
Datasheet AOD4120 Download
Manufacturer
Alpha & Omega Semiconductors
Description N-Channel MOSFET
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AOD4120 datasheet page 1 preview

GENERAL DESCRIPTION

AOD4120L is a Green Product ordering option. AOD4120 and AOD4120L are electrically identical. TO-252 D-PAK

FEATURES

1.4 VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <18 mΩ (VGS = 10V) RDS(ON) <25 mΩ (VGS = 4.5V) RDS(ON) <75 mΩ (VGS = 2.5V) 193 UIS Tested 18 Rg,Ciss,Coss,Crss Tested D Top View Drain Connected to Tab G S G D S

ABSOLUTE MAXIMUM RATINGS

TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 20 ±16 25 23 75 13 25 33 16.7 2.5 1.7 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17 40 3.6 Max 25 50 4.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
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