GENERAL DESCRIPTION
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 300V@150℃ 14A <0.28W Top View TO252 DPAK Bottom View D D S G S G ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL G Maximum 250 ±30 14 10 32 3.4 173 346 5 150 1 -50 to 175 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Typical 45 0.7 Maximum 55 0.5 1 D S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev1.0: November 2023 Page 1...
Alpha & Omega Semiconductors
