GENERAL DESCRIPTION
Product Summary VDS ID (at VGS= 10V) RDS(ON) (at VGS= 10V) RDS(ON) (at VGS = 4.5V) 30V 36A < 7.5mΩ < 11mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D Bottom View Top View TO251A IPAK Bottom View D S G S G G D G S S D G S ABSOLUTE MAXIMUM RATINGS
TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±20 36 28 125 13.5 10.5 27 36 50 25 2.5 1.6 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 41 2.5 Max 20 50 3 Units °C/W °C/W °C/W Re...
Alpha & Omega Semiconductors
